SUD40N02-08 vishay siliconix new product document number: 71422 s-03182?rev. a, 05-mar-01 www.vishay.com 1 n-channel 20-v (d-s), 175 c mosfet
v ds (v) r ds(on) ( ) i d (a) a 0.0085 @ v gs = 4.5 v 40 20 0.014 @ v gs = 2.5 v 40 d g s n-channel mosfet to-252 s gd top view drain connected to tab order number: SUD40N02-08
parameter symbol limit unit drain-source voltage v ds 20 gate-source voltage v gs 12 v t c = 25 c 40 continuous drain current a t c = 100 c i d 40 pulsed drain current i dm 100 a continuous source current (diode conduction) a i s 40 t c = 25 c 71 maximum power dissipation t a = 25 c p d 8.3 b, c w operating junction and storage temperature range t j , t stg ?55 to 175 c
parameter symbol typical maximum unit t 10 sec. 15 18 maximum junction-to-ambient b steady state r thja 40 50 c/w maximum junction-to-case r thjc 1.75 2.1 notes a. package limited b. surface mounted on 1? x 1? fr4 board c. t 10 sec
SUD40N02-08 vishay siliconix new product www.vishay.com 2 document number: 71422 s-03182 ? rev. a, 05-mar-01 parameter symbol test condition min typ a max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 20 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.6 v gate-body leakage i gss v ds = 0 v, v gs = 12 v 100 na v ds = 20 v, v gs = 0 v 1 c 50 a on-state drain current b i d(on) v ds = 5 v, v gs = 4.5 v 40 a v gs = 4.5 v, i d = 20 a 0.0068 0.0085 drain-source on-state resistance b r ds(on) v gs = 4.5 v, i d = 20 a, t j = 125 c 0.0104 0.013 ds(on) v gs = 2.5 v, i d = 20 a 0.011 0.014 forward transconductance b g fs v ds = 5 v, i d = 40 a 20 s dynamic a input capacitance c iss 2660 output capacitance c oss v gs = 0 v, v ds = 20 v, f = 1 mhz 730 pf reverse transfer capacitance c rss 375 total gate charge c q g 26 35 gate-source charge c q gs v ds = 10 v, v gs = 4.5 v, i d = 40 a 5 nc gate-drain charge c q gd ds gs d 7 turn-on delay time c t d(on) 20 35 rise time c t r v dd = 10 v, r l = 0.25 120 190 turn-off delay time c t d(off) v dd = 10 v, r l = 0.25 40 a, v gen = 4.5 v, r g = 2.5 45 70 ns fall time c t f 20 35 source-drain diode ratings and characteristic (t c = 25 c) pulsed current i sm 100 a diode forward voltage b v sd i f = 100 a, v gs = 0 v 1.2 1.5 v source-drain reverse recovery time t rr i f = 40 a, di/dt = 100 a/ s 35 70 ns notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. c. independent of operating temperature.
SUD40N02-08 vishay siliconix new product document number: 71422 s-03182 ? rev. a, 05-mar-01 www.vishay.com 3 0 900 1800 2700 3600 4500 048121620 0 3 6 9 12 0 10203040506070 0 20 40 60 80 100 120 0 20406080100 0.000 0.005 0.010 0.015 0.020 0 20406080100 0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 20 40 60 80 100 0246810 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs v gs ? gate-to-source voltage (v) ? transconductance (s) g fs 25 c ? 55 c 1, 0.5 v t c = 125 c v gs = 10 v i d = 40 a v gs = 4.5 thru 3 v 2.5 v v gs = 2.5 v c iss c oss c rss t c = ? 55 c 25 c 125 c 2 v v gs = 4.5 v ? on-resistance ( r ds(on) ) ? drain current (a) i d
SUD40N02-08 vishay siliconix new product www.vishay.com 4 document number: 71422 s-03182 ? rev. a, 05-mar-01 0.0 0.4 0.8 1.2 1.6 2.0 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) ? source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 1.5 v gs = 4.5 v i d = 20 a t j = 25 c t j = 150 c (normalized) ? on-resistance ( r ds(on) ) 0
0 10 20 30 40 50 0 25 50 75 100 125 150 175 safe operating area v ds ? drain-to-source voltage (v) 200 10 0.1 1 10 100 limited by r ds(on) 1 100 t c = 25 c single pulse maximum avalanche drain current vs. case t emperature t c ? case temperature ( c) ? drain current (a) i d 1 ms 10 ms 100 ms dc 10 s 100 s normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 100 normalized effective transient thermal impedance 600 0.2 0.1 duty cycle = 0.5 ? drain current (a) i d 1 10 0.05 0.02 single pulse
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